Sic silicon carbide wafer 4H-P type on axis 0°Used to manufacture high power devices
4H-P type silicon carbide substrate is a semiconductor material with a hexagonal lattice structure, and P-type conductivity is obtained by a specific doping process (such as doping aluminum and other elements). Such substrates typically have high doping concentrations and low resistivity, making them ideal for manufacturing high-power devices. An axis of 0° usually refers to the fact that a particular crystal direction or positioning edge of the substrate has an Angle of 0° from a reference direction (such as the substrate plane), which helps to ensure the consistency and reliability of the device in subsequent manufacturing processes.
Features:
- Wide band gap: Type 4H-P silicon carbide has a wide band gap of about 3.26 eV, which enables it to work stably in high temperature and high voltage environments.
- High thermal conductivity: With a thermal conductivity of about 4.9W /m·K, much higher than silicon materials, it can effectively direct and dissipate heat, suitable for high power density applications.
- Low resistivity: P-type doped silicon carbide has a low resistivity, suitable for the construction of PN junction, so as to meet the needs of high power devices.
- High hardness and mechanical strength: Silicon carbide materials have very high mechanical strength and toughness for applications under harsh conditions.
- High breakdown voltage: Able to withstand higher voltages, helping to reduce device size and improve energy efficiency.
Technical Parameter
| Propery | P-type 4H-SiC, Single Crystal |
| Lattice Parameters | a=3.082 Å c=10.092 Å |
| Stacking Sequence | ABCB |
| Mohs Hardness | ≈9.2 |
| Density | 3.23 g/cm3 |
| Therm. Expansion Coefficient | 4.3×10-6/K(⊥Caxis) 4.7×10-6/K( ∥Caxis) |
| Refraction Index @750nm | no = 2.621 ne = 2.671 |
| Dielectrc Constant | c~9.66 |
| Thermal Conductivity | 3-5 W/cm·K@298K |
| Band-Gap | 3.26 eV |
| Break-Down Electrical Field | 2-5×106V/cm |
| Saturation Drift Velocity | 2.0×105m/s |
| Wafer Orientation | On axis: [1120] ± 0.5° for 4H/6H-P |
Applications:
- Power electronics: 4H-P type silicon carbide substrate can be used to manufacture all kinds of high-voltage devices, such as IGBT, MOSFET, etc. These devices are widely used in DC power transmission, frequency converter, industrial power supply and other fields. Especially in electric vehicles and renewable energy technologies, silicon carbide devices can significantly improve power conversion efficiency and reduce energy consumption.
- Semiconductor lighting field: It can be used to manufacture high-efficiency and high-reliability LED chips, which are widely used in liquid crystal display backlight, landscape lighting, automotive lights and other fields. The high thermal conductivity of silicon carbide substrate helps to improve the luminous efficiency and stability of LED.
- Sensor field: can be used to manufacture high-sensitivity, high-stability sensors, such as pressure sensors, temperature sensors, etc. These sensors have important applications in automotive electronics, medical equipment, environmental monitoring and other fields. The high temperature stability and chemical inertness of SIC substrates make it an ideal material for the manufacture of highly reliable sensors.
- Microwave radio frequency field: Although the silicon carbide N substrate is widely used in this field, the 4H-P type silicon carbide substrate can also be used by specific processes to manufacture high frequency and high power electronic devices, such as amplifiers, oscillators, etc. These devices have potential applications in wireless communication, satellite communication, radar and other fields.
Customization:
ZMSH provides a full range of silicon carbide substrate 4H-P (axis 0°) services, including precision custom processing to meet customer specific needs, the use of professional logistics channels to ensure product safety and on-time delivery, and the use of shock-proof, moisture-proof packaging materials carefully packaged and delivered to ensure high-quality delivery of silicon carbide substrates.
