SiC wafer, Silicon Carbide Wafer, SiC Substrate, Silicon Carbide Substrate, P Grade, D Grade, 2inch SiC, 4inch SiC, 6inch SiC, 8inch SiC, 12inch SiC, 4H-N, 4H-SEMI, 6H-N, HPSI type
Character of 4H-N SiC
- use SIC Monocrystal to manufacture
- customization is allowed by design drawings
- high performance, high resistivity and low leakage currents
- 9.2 Mohs high hardness, just behind diamond
- widely used in high-tech areas, like power electronics, LEDs and sensors
Brief introduction of 4H-N SiC
Silicon carbide (SiC) is a semiconductor material made of silicon and carbon.
It has excellent hardness and strength, making it very durable.
SiC is known for its excellent thermal conductivity, which allows it to efficiently dissipate heat, making it ideal for high-power and high-temperature applications.
One of its main properties is a wide bandgap, which enables devices to operate at higher voltages, temperatures, and frequencies than silicon.
SiC also has high electron mobility, which helps enable faster and more efficient electronic devices.
Its chemical stability and resistance to oxidation make it ideal for harsh environments.
SiC is widely used in power electronics, where efficiency and durability are critical, as well as high-frequency devices, LEDs, and as a substrate for the growth of other semiconductor materials such as gallium nitride (GaN).
Its properties make it a valuable material in advanced electronic applications.
More details about 4H-N SiC
*More details will be shown in the following table.
| 6-inch Diameter 4H N-type Silicon Carbide Substrate Specification |
| SUBSTRATE PROPERTY | Production Grade | Dummy Grade |
| Diameter | 150 mm ± 0.1 mm |
| Surface Orientation | off-axis: 4° toward <11-20> ± 0.5° |
| Primary Flat Orientation | <1-100> ± 5.0˚ |
| Primary Flat Length | 47.5 mm ± 2.0 mm |
| Resistivity | 0.015~0.028Ω·cm | ≤0.1Ω·cm |
| Thickness | 350.0 μm ± 25.0 μm or 500.0 μm ± 25.0 μm |
| TTV | ≤15 μm | ≤25 μm |
| BOW | ≤30 μm | ≤50 μm |
| Warp | ≤40 μm | ≤60 μm |
| Surface Finish | Double Side Polish, Si Face CMP (chemical polishing) |
| Surface Roughness | CMP Si Face Ra≤0.5 nm, C Face Ra≤1 nm | N/A |
| Note: Customerized specifications other than the above parameters are acceptable. |
Other samples of 4H-N SiC
*If you have further requirements, we can manufacture the customized ones.
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FAQ
1. Q: Where can you use 6-inch 4H-N SiC?
A: There are many areas of application, such as MOSFET, IGBT and diode, suitable for high-power, high-efficiency applications such as electric vehicles, power converters and smart grids.
2. Q: How does 4H-N SiC contribute to renewable energy?
A: 4H-N SiC-based power electronics improve the efficiency and reliability of renewable energy systems like solar inverters and wind turbines, enabling better energy conversion and management
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6Inch 4H-N Silicon Carbide SiC Substrate Dia 150mm Thickness 350um 500um N Type Prime Grade Dummy Grade Images
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