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SiC Silicon Carbide Ceramic Trays Plate Wafer Holder ICP Etching Process For Epitaxial Growth Processing

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SiC Silicon Carbide Ceramic Trays Plate Wafer Holder ICP Etching Process For Epitaxial Growth Processing

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Brand Name : ZMSH

Model Number : SiC Ceramic Trays

Certification : rohs

Place of Origin : CHINA

Payment Terms : T/T

Delivery Time : 2-4 weeks

Product Name : Silicone Carbide Tray

Material : Silicone Carbide Ceramic

Color : Blank

Purity : 99.999%

Tolerance : ±0.001mm

Application : Epitaxial Growth Processing

Size : Customized Size

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Product Description

SiC Silicon Carbide Ceramic Trays Plate Wafer Holder ICP Etching Process Use For Epitaxial Growth Processing

Non-oxide ceramic, silicon carbide ceramic (SiC) is a superhard material with a hardness of up to 9.5 on the Mohs scale. Silicon carbide ceramics not only have excellent mechanical properties at room temperature, such as high flexural strength, excellent oxidation resistance, good corrosion resistance, high wear resistance and low friction coefficient, but also have excellent mechanical properties (strength, creep resistance) at high temperatures, and its high-temperature strength can be maintained to 1600 °C, which is the best among all ceramic materials. The oxidation resistance of silicon carbide ceramics is also the best among all non-oxide ceramics.

SiC Silicon Carbide Ceramic Trays Plate Wafer Holder ICP Etching Process For Epitaxial Growth Processing


Features

- Avoid peeling and make sure all surfaces are coated

High temperature oxidation resistance: Stable at high temperatures up to 1600°C

High purity: Made by CVD chemical vapor deposition under high temperature chlorination conditions.

SiC Silicon Carbide Ceramic Trays Plate Wafer Holder ICP Etching Process For Epitaxial Growth ProcessingSiC Silicon Carbide Ceramic Trays Plate Wafer Holder ICP Etching Process For Epitaxial Growth Processing

Corrosion resistance: high hardness, dense surface, fine particles.

Corrosion resistance: resistant to acids, alkalis, salts and organic reagents.

- Achieve optimal laminar airflow patterns

- Ensures uniform heat distribution

- Prevents contamination or spread of impurities


Technical Parameters

SiC Silicon Carbide Ceramic Trays Plate Wafer Holder ICP Etching Process For Epitaxial Growth Processing


Applications

- Mechanical seal rings

- Valve balls, seats, bushings

- Kiln furniture

- heat exchanger

- Fixing and moving turbine components

- Grinding medium

- Military bulletproof inserts

- Burner parts

- Ceramic bearings

SiC Silicon Carbide Ceramic Trays Plate Wafer Holder ICP Etching Process For Epitaxial Growth ProcessingSiC Silicon Carbide Ceramic Trays Plate Wafer Holder ICP Etching Process For Epitaxial Growth Processing

Our services

1. Factory direct manufacture and sell.

2. Fast, accurate quotes.

3. Reply to you within 24 working hours.

4. ODM: Customized design is avaliable.

5. Speed and precious delivery.


FAQ

1. Q: What's your MOQ?
A: (1) For inventory, the MOQ is 3pcs.
(2) For customized products, the MOQ is 10pcs up.

2. Q: What's the delivery time?
A: (1) For the standard products
For inventory: the delivery is 5 workdays after you place the order.
For customized products: the delivery is 2 or 3 weeks after you place the order.
(2) For the special-shaped products, the delivery is 4 workweeks after you place the order.

3. Q: What's the way of shipping and cost?
A: (1) We accept DHL, Fedex, EMS etc.
(2) If you have your own express account, it's great.If not,we could help you ship them.
Freight is in accordance with the actual settlement.


Product Tags:

Silicon Carbide Ceramic Trays Plate

      

Epitaxial Growth Processing Ceramic Trays Plate

      

ICP Etching Process Ceramic Trays Plate

      
China SiC Silicon Carbide Ceramic Trays Plate Wafer Holder ICP Etching Process For Epitaxial Growth Processing wholesale

SiC Silicon Carbide Ceramic Trays Plate Wafer Holder ICP Etching Process For Epitaxial Growth Processing Images

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