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2inch Si Dopant GaAs Wafers Gallium Arsenide Substrates Double Side Polished For LED

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2inch Si Dopant GaAs Wafers Gallium Arsenide Substrates Double Side Polished For LED

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Brand Name : zmsh

Model Number : 6INCH GaAs wafer

Certification : ROHS

Place of Origin : china

MOQ : 10pcs

Price : by case

Supply Ability : 500pcs/month

Delivery Time : 1-4weeks

Packaging Details : PET film in 100-grade cleaning room

material : MONOcrystal GaAs

industry : semicondutor wafer For ld or led

application : semiconductor substrate, led chip, optical glass window,device substrates

method : CZ

size : 2inch~6inch

Thickness : 0.425mm

surface : cmp/etched

doped : Si-doped

MOQ : 10PCS

grade : research grade/dummy grade

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2Inch Si Dopant GaAs Wafers Gallium Arsenide Substrates Double Side Polished For LED Application
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GaAs wafer

Gallium arsenide is a compound composed of metallic gallium and semi-metallic arsenic in atomic ratio 1:1. It has a gray metallic luster and its crystal structure is sphalerite type. Gallium arsenide had been synthesized as early as 1926. Its semiconductor properties were confirmed in 1952. The devices made of gallium arsenide materials have good frequency response, high speed and high operating temperature, which can meet the needs of integrated optoelectronics. It is currently the most important optoelectronic material, but also the most important microelectronic material after silicon material, it is suitable for the manufacture of high-frequency, high-speed devices and circuits.

Application
In the field of microelectronics, gallium arsenide high-speed digital circuits, microwave monolithic circuits, photoelectric integrated circuits, and high-power field effect transistors developed by direct ion implantation self-allocating plane technology on semi-insulated gallium arsenide as matrix have the characteristics of fast speed, high frequency, low power consumption and radiation resistance, which are not only of great significance in national defense. It is more widely used in civil and national economic construction. In the field of communications, semi-insulated gallium arsenide materials are mainly used in high-frequency communication devices, driven by the civil wireless communication market in recent years, especially the mobile phone market, the market size of semi-insulated gallium arsenide materials is also growing rapidly.
Specification detail
Type/Dopant 导电类型/掺杂元素 Semi-Insulated P-Type/Zn N-Type/Si N-Type/Si
Application 应用 Micro Eletronic LED Laser Diode
Growth Method 长晶方式 VGF
Diameter 直径 2", 3", 4", 6"
Orientation 晶向 (100)±0.5°
Thickness 厚度 (µm) 350-625um±25um
OF/IF 参考边 US EJ or Notch
Carrier Concentration 载流子浓度 - (0.5-5)*1019 (0.4-4)*1018 (0.4-0.25)*1018
Resistivity 电阻率 (ohm-cm) >107 (1.2-9.9)*10-3 (1.2-9.9)*10-3 (1.2-9.9)*10-3
Mobility 电子迁移率 (cm2/V.S.) >4000 50-120 >1000 >1500
Etch Pitch Density 位错密度(/cm2) <5000 <5000 <5000 <500
TTV 平整度 [P/P] (µm) <5
TTV 平整度 [P/E] (µm) <10
Warp 翘曲度 (µm) <10
Surface Finished 表面加工 P/P, P/E, E/E

2inch Si Dopant GaAs Wafers Gallium Arsenide Substrates Double Side Polished For LED2inch Si Dopant GaAs Wafers Gallium Arsenide Substrates Double Side Polished For LED2inch Si Dopant GaAs Wafers Gallium Arsenide Substrates Double Side Polished For LED


ABOUT OUR ZMKJ

ZMKJ locates in the city of Shanghai, Which is the best city of China, and our factory is founded
in Wuxi city in 2014.We specialize in processing a varity of materials into wafers, substrates
and custiomized optical glass parts.components widely used in electronics, optics,
optoelectronics and many other fields. We also have been working closely with many domestic
and oversea universities, research institutions and companies, provide customized products
and services for their R&D projects.
It's our vision to maintaining a good relationship of cooperation with our all customers by our
good reputatiaons. so we also can provide some other materials substrates as like:
2inch Si Dopant GaAs Wafers Gallium Arsenide Substrates Double Side Polished For LED
Packaging – Logistcs
Worldhawk concerns each details of the package , cleaning, anti-static , shock treatment .
According to the quantity and shape of the product , we will take a different packaging process!
2inch Si Dopant GaAs Wafers Gallium Arsenide Substrates Double Side Polished For LED
FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and by FOB
and pay condition of 50％ deposit,50％ before delivery.
Q: What's the delivery time?
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 3 workweeks after order.

Q: What's the MOQ?
(1) For inventory, the MOQ is 5pcs.
(2) For customized products, the MOQ is 10pcs-30pcs.
Q: Do you have inspection report for material?
We can supply detail report for our products.


Product Tags:

2inch Si Dopant GaAs Wafers

      

Double Side Polished GaAs Wafers

      

LED Gallium Arsenide Substrates

      
China 2inch Si Dopant GaAs Wafers Gallium Arsenide Substrates Double Side Polished For LED wholesale

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